The epitaxy of copper on sapphire

Abstract

Epitaxial twinned single-crystal films of copper have been grown on sapphire substrates by high vacuum evaporation in the temperature range 240 - 375°C. The presence of a twin relationship in copper deposited on the basal plane of sapphire was demonstrated and evaluated by x-ray diffraction techniques. The epitaxy has been shown to be (111)Cu ∥ (0001)α-Al2O3; [21̄1̄)Cu ∥ [21̄1̄0]α-Al2O3. The films have been found to exhibit the bulk metal resistivity. © 1968 The American Institute of Physics.