E. Burstein
Ferroelectrics
From the procedure developed for computing the In-Ga-P ternary phase diagram the InP-GaP pseudobinary phase diagram is generated. The free energies for the ternary liquid and pseudobinary solid are calculated as a function of composition, which establishes the stability of the solid us. the liquid and shows on what substrate liquid-phase epitaxial growth is possible. The composition variation of an InxGa1-xP solid that is deposited during cooling in liquid phase epitaxial growth under various conditions is calculated. © 1971, The Electrochemical Society, Inc. All rights reserved.
E. Burstein
Ferroelectrics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules