M.A. Lutz, R.M. Feenstra, et al.
Surface Science
The mechanical behavior of crystalline silicon during small-scale indentation has been studied using a Nanoindenter. Tests were performed on both p-type and n-type materials in the (100), (110), and (111) orientations at peak loads ranging from 0.5 to 120 mN. The indentation load-displacement curves exhibit two features which appear to be unique to silicon. First, at large peak loads, a sharp discontinuity in displacement is observed as the indenter is unloaded. Second, at small peak loads, a large, non-degenerative hysteresis is exhibited. Possible mechanistic origins for the discontinuity and hysteresis are discussed. © 1990 AIME.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
T.N. Morgan
Semiconductor Science and Technology