P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The formation of the rectifying Schottky barrier on metal-semiconductor interfaces is one of the longest standing problems of solid-state physics. We present a review of the models and theories for Schottky barrier. Two important examples of metal-semiconductor interfaces, namely those containing simple and alkali metals, are analyzed in order to evaluate these models and theories in the light of ab-initio calculations. © 1991.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures