Theory of substitutional deep traps in covalent semiconductors

Harold P. Hjalmarson; P. Vogl; D.J. Wolford; John D. Dow

doi:10.1103/PhysRevLett.44.810

Physical Review Letters

Paper

24 Mar 1980

Theory of substitutional deep traps in covalent semiconductors

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Abstract

The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.

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PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS.

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Gallium Arsenide and Related Compounds 1984

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Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces

G.D. Gilliland, D.J. Wolford, et al.

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Interface-free GaAs structures. From bulk to the quantum limit

D.J. Wolford, G.D. Gilliland, et al.

Gallium Arsenide and Related Compounds 1991

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Dependence of the Al_xGa_1-xAs band edge on alloy composition based on the absolute measurement of x

T.F. Kuech, D.J. Wolford, et al.

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Abstract

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PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS.

Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces

Interface-free GaAs structures. From bulk to the quantum limit

Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x

Dependence of the Al_xGa_1-xAs band edge on alloy composition based on the absolute measurement of x