Conference paper
NITROGEN ISOELECTRONIC TRAP IN GaAs.
D.J. Wolford, J.A. Bradley, et al.
ICPS Physics of Semiconductors 1984
Paper
Theory of substitutional deep traps in covalent semiconductors
Abstract
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
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