Conference paper
LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.
T.F. Kuech, E. Veuhoff, et al.
Gallium Arsenide and Related Compounds 1984
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
T.F. Kuech, E. Veuhoff, et al.
Gallium Arsenide and Related Compounds 1984
D.J. Wolford, G.D. Gilliland, et al.
Physical Review B
T.F. Kuech, D.J. Wolford, et al.
Applied Physics Letters
J.A. Kash, J.H. Collet, et al.
Physical Review B