H.P. Hjalmarson, G.D. Gilliland, et al.
Journal of Luminescence
Paper
Theory of substitutional deep traps in covalent semiconductors
Abstract
The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.
Related
G.D. Gilliland, A. Antonelli, et al.
Physical Review Letters
G.D. Gilliland, D.J. Wolford, et al.
Physical Review B
Coenraad A. Swarts, Donald L. Miller, et al.
Physical Review B