Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
The dependence of the current on the electric field in silicon-rich silicon dioxide (Si-rich SiO2) is studied with the use of a theoretical model based on quantum-mechanical tunneling between a random array of small semiconducting Si islands in a large-band-gap SiO2 insulator matrix. The current J is calculated in the presence of an electric field F by a simple percolation method for various regimes of external voltage. In the high-field limit, the current is found to obey a Fowler-Nordheim law, 1n J-FF, but with F weakly dependent on the field F. © 1984 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Krol, C.J. Sher, et al.
Surface Science