Thermal forming of niobium oxide switchable resistors

Abstract

A controlled thermal process has been developed for the production of niobium oxide switchable resistors (NOSR), that are suitable for a medium speed, random access, read-write memory application. In particular, the voltage necessary to form the NOSR from the as-fabricated state to the bistable switchable resistor state has been reduced to approximately 2V at 1 mA. The thermal process increases the oxygen vacancy level in the niobium oxide, thereby lowering the bulk resistivity. The applied voltage now primarily appears across the niobium oxide-counterelectrode barrier, and as a consequence a lower external voltage is necessary to produce the same field in this vicinity. The presence of Sb or Bi on the oxide during the heat treatment lowers the subsequent current necessary for forming. © 1973 American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc.