A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
J. Tersoff
Applied Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009