Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010