Peter Y. Yu, F. Evangelisti
Solid State Communications
We summarize our recent results on thickness and surface variations in the conductivity and photoconductivity of phosphorus-doped n-type hydrogenated amorphous silicon films. Our principal finding is that thinner films have lower conductivities, higher activation energies and, for a certain range of thicknesses, higher photoconductivities. A speculation is given for the origin of the enhanced photoconductivity in terms of field-assisted carrier separation in the surface barrier region. © 1980.
Peter Y. Yu, F. Evangelisti
Solid State Communications
M.H. Brodsky, M. Cardona
Journal of Non-Crystalline Solids
M.H. Brodsky, M.A. Frisch, et al.
Applied Physics Letters
D.P. DiVincenzo, M.H. Brodsky
Journal of Non-Crystalline Solids