J.-M. Halbout, D. Grischkowsky
Applied Physics Letters
We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high-resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye-laser pulses and produces interferograms with exceptional signal-to-noise ratios.
J.-M. Halbout, D. Grischkowsky
Applied Physics Letters
M. Ree, K.-J. Chen, et al.
Journal of Applied Physics
F.E. Doany, D. Grischkowsky
CLEO 1987
Joshua E. Rothenberg, D. Grischkowsky
Physical Review Letters