F. Fang, W.E. Howard
Journal of Applied Physics
The electric field dependence of electron mobilities in p-type silicon with doping density of 4.5×1016 cm-3 at room temperature was measured using a time-of-flight technique. It was found that the electron mobility at zero field is very close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron-hole scattering.
F. Fang, W.E. Howard
Journal of Applied Physics
J.-M. Halbout, P.G. May, et al.
TMPEO 1986
J. Luo, H. Munekata, et al.
Surface Science
C.T. Chuang, D.D. Tang
IEEE Journal of Solid-State Circuits