Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings