J.A. Barker, D. Henderson, et al.
Molecular Physics
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
J.A. Barker, D. Henderson, et al.
Molecular Physics
K.A. Chao
Physical Review B
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Technical Digest-International Electron Devices Meeting
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