Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We report on transport and EPR studies of (TMTSF)2-PF6, both in its pristine form and when doped with the sulfur analog TMTTF. All samples undergo a single phase transition which can be seen in both the transport and magnetic data and which, in the undoped material, occurs at ∼11.5 K. The effects of a 3% dopant concentration are dramatic: a 40% rise in the transition temperature, a 130% rise in the room- temperature spin susceptibility and a 30% fall in the low-temperature g shift. Possible causes are discussed. © 1981.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Imran Nasim, Melanie Weber
SCML 2024
Frank Stem
C R C Critical Reviews in Solid State Sciences
K.N. Tu
Materials Science and Engineering: A