R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A technique is described by which recombination lifetime may be resolved from trapping effects. Analysis is shown by which trap capture and release times may be measured as well as density and energy level of trapping levels. It is shown that superlinearity in CdSe sintered layers arises not from "activation", as described in currently held models of variation of recombination time with light level, but rather is associated with increase of mobility with light level. © 1961.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021