Ernest Y. Wu, B. Li, et al.
IEDM 2013
Alternative gate insulators for silicon-based technologies involving nitridation or reoxidation-nitridation of silicon dioxide layers are shown to be inferior to as-grown oxide in terms of charge trapping over a wide range of fields under uniform electron-injection conditions. Although nitrided layers seem to suppress trap generation more effectively than does silicon dioxide, background trapping in the as-fabricated oxynitride layers formed near their interfaces is greatly increased. The apparent reduction in trapped charges universally reported in reoxidized-nitrided oxides under high-field injection conditions is shown to be due to a decrease in occupation of these sites at fields exceeding 8 MV/cm.
Ernest Y. Wu, B. Li, et al.
IEDM 2013
D.J. DiMaria, J.H. Stathis
Journal of Applied Physics
S. Lombardo, J.H. Stathis, et al.
Physical Review Letters
M.J. Uren, J.H. Stathis, et al.
Journal of Applied Physics