D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
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Micro and Nano Engineering
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