Tunneling microscopy and spectroscopy of semiconductor surfaces and interfaces

Abstract

We present a review of the principles of scanning tunneling microscopy and of its extensions by modulation techniques. Emphasis is placed on topographic studies of semiconductor surfaces with atomic resolution, finite voltage effects and surface state detection by tunneling spectroscopy. Results obtained for an ordered Au/Si(111) overlayer illustrate the versatility of this unique local probe of structural and electronic surface properties. © 1986.