Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
PaperInterface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficientR. Ghez, J.S. LewJournal of Crystal Growth
PaperKinetic model for the chemical vapor deposition of tungsten in the silane reduction processJulian J. HsiehJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
