Benjamin G. Lee, Xiaogang Chen, et al.
LEOS 2007
Paper
Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator
Abstract
Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a Vπ-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit. © 2007 Optical Society of America.
Related
Zhihong Chen, Yu-Ming Lin, et al.
Physica E: Low-Dimensional Systems and Nanostructures
William M.J. Green, Hendrik F. Hamann, et al.
OFC 2007
Oki Gunawan, Lidija Sekaric, et al.
Nano Letters