Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics