Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
John G. Long, Peter C. Searson, et al.
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997