Peter J. Price
Surface Science
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
Peter J. Price
Surface Science
Frank Stem
C R C Critical Reviews in Solid State Sciences
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta