Ultrafast all-optical modulator with femtojoule absorbed switching energy in silicon-on-insulator

Abstract

We demonstrate an all-optical switch based on a waveguideembedded 1D photonic crystal cavity fabricated in silicon-on-insulator technology. Light at the telecom wavelength is modulated at high-speed by control pulses in the near infrared, harnessing the plasma dispersion effect. The actual absorbed switching power required for a 3 dB modulation depth is measured to be as low as 6 fJ. While the switch-on time is on the order of a few picoseconds, the relaxation time is almost 500 ps and limited by the lifetime of the charge carriers. © 2010 Optical Society of America.