Conference paper
Charge trapping in aggressively scaled metal gate/high-κ stacks
E. Gusev, V. Narayanan, et al.
IEDM 2004
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
E. Gusev, V. Narayanan, et al.
IEDM 2004
J. Doyle, P. Chaudhari, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
A.C. Callegari, G.D. Spiers, et al.
Journal of Applied Physics
B. Cartier, M. Steen, et al.
VLSI Technology 2009