A.C. Callegari, P. Jamison, et al.
IEDM 2004
An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410°C for 57 h.
A.C. Callegari, P. Jamison, et al.
IEDM 2004
A.C. Callegari, B.K. Furman, et al.
ESSDERC 1992
Yih-Cheng Shih, A.C. Callegari, et al.
Journal of Applied Physics
D.A. Buchanan, E. Gusev, et al.
IEDM 2000