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Temperature scaling of nanoscale silicon MOSFETs
V. Sverdlov, Y. Naveh, et al.
European Workshop on Low Temperature Electronics 2002
Paper
Universal distribution of transparencies in highly conductive Nb/AlOx/Nb junctions
Abstract
Aluminum oxide barrier samples were fabricated in situ from Nb/Al/Nb trilayers. It was shown through experimental dc IV curves of two junctions of different areas with the Josephson critical current suppressed by a magnetic field that the data agrees with the Schep-Bauer distribution.
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