M.O. Aboelfotoh, L. Stolt, et al.
Thin Solid Films
We report a first observation of the remarkably low electrical resistivity of copper germanide thin films formed at temperatures below 200°C. At these low temperatures, the ε-Cu3Ge phase with a monoclinic crystal structure is formed, with room-temperature resistivity which can be as low as 5.5 μΩ cm. The films are electrically stable up to at least 600°C, and, unlike pure copper, are also stable against oxygen and air exposure.
M.O. Aboelfotoh, L. Stolt, et al.
Thin Solid Films
K.N. Chen, C. Cabral Jr., et al.
Microelectronic Engineering
J.R. Thompson, J.G. Ossandon, et al.
Physical Review B - CMMP
M.O. Aboelfotoh, H.M. Tawancy, et al.
Applied Physics Letters