A. Deutsch, G.V. Kopcsay, et al.
ECTC 1997
Inspection of complementary metal-oxide-semiconductor circuits by electron-beam charging is demonstrated. Isolation of the gate electrodes used in the actual circuits is verified. The inspection is done entirely without contact, without removing wafers from the clean room, and prior to metal and interlevel dielectric deposition.
A. Deutsch, G.V. Kopcsay, et al.
ECTC 1997
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
A.A. Bright, S. Kaushik, et al.
Journal of Applied Physics
P. Agnello, T.O. Sedgwick, et al.
Applied Physics Letters