H.D. Dulman, R.H. Pantell, et al.
Physical Review B
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in topgate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. © 2009 American Chemical Society.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Ellen J. Yoffa, David Adler
Physical Review B
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids