Frank Stem
C R C Critical Reviews in Solid State Sciences
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in topgate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. © 2009 American Chemical Society.
Frank Stem
C R C Critical Reviews in Solid State Sciences
David B. Mitzi
Journal of Materials Chemistry
K.A. Chao
Physical Review B
Ming L. Yu
Physical Review B