John G. Long, Peter C. Searson, et al.
JES
Laser-induced deposition of controlled quality silicon dioxide and thin metallic films was investigated at 248 nm for phase shifting mask (PSM) repair. SiOx (x=1.5-2) films were deposited from single precursors, such as triethoxyvinylsilane (TEVS), tetraallyloxysilane (TAOS), di-t-butoxy-diacetooxysilane (TBSA) with no oxidizing coreactant. A deposition rate of 0.25 angstrom/pulse was possible at room temperature, with excellent optical properties (n=1.47, k=0.05). Metallic films were deposited from tungsten, gold, molybdenum and chromium compounds. The results showed that the optical transmission and phase-shifting properties of the deposits can be matched well to the films commonly used in phase shifting masks.
John G. Long, Peter C. Searson, et al.
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics