Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We report photoemission measurements of valence band critical points, core level binding energies and spin-orbit splittings, and Auger processes using synchrotron radiation in the 20-70 eV range for InSb. Based on our studies of InSb and other semiconductors, several precautions when interpreting photoemission data in this energy range (e.g. Auger processes, matrix elements) are discussed. © 1973.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters