Conference paper
ATOMIC DIFFUSION IN SILICON.
R. Car, P.J. Kelly, et al.
ICPS Physics of Semiconductors 1984
Energy band calculations for SiO2 have not thus far been feasible due to the complexity of the unit cell. In this paper we report the results of a calculation using the empirical tight-binding method. The results are useful in interpreting observed spectra. © 1975.
R. Car, P.J. Kelly, et al.
ICPS Physics of Semiconductors 1984
M. Scheffler, J. Bernholc, et al.
Physical Review B
M. Di Ventra, S.T. Pantelides, et al.
Physical Review Letters
Chris G. Van de Walle, Y. Bar-Yam, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films