Workshop paper
Stress relaxation in Cu thin films
C. Witt, R. Rosenberg, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2008
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
C. Witt, R. Rosenberg, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2008
C.-K. Hu, L. Gignac, et al.
IITC 2002
M.A. Moske, P.S. Ho, et al.
Journal of Applied Physics
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering