M.J. Attardo, R. Rosenberg
Journal of Applied Physics
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
M.J. Attardo, R. Rosenberg
Journal of Applied Physics
T.M. Shaw, C.-K. Hu, et al.
Applied Physics Letters
K.N. Tu, R. Rosenberg
Thin Solid Films
A.F. Mayadas, R.T.C. Tsui, et al.
Applied Physics Letters