L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Electron conduction in the accumulation layer of hydrogenated amorphous silicon (a-Si) thin film transistors shows a transition from activated band conduction to variable-range hopping, for temperatures below approximately 240°K. The observed T- 1 3 temperature dependence suggests that the hopping takes place in a two-dimensional (2-D) layer close to the a-Si/gate dielectric interface. This is consistent with the calculated conducting channel thickness of 8.5 Å to 60 Å, for the range of gate voltages used. The present results are also consistent with previously reported 2-D variable range hopping conductivity in thin amorphous semiconductors. © 1989.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Kigook Song, Robert D. Miller, et al.
Macromolecules
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008