R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process. © 2014 American Chemical Society.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures