M.J. Carey, J.R. Childress, et al.
INTERMAG 2002
Concurrent low energy (50-70 eV) ion irradiation during silicon molecular beam epitaxy results in an increased epitaxial thickness at very low temperatures relative to conventional molecular beam epitaxy. Ion irradiation of a (1×1) dihydride-terminated Si(001) results in a (2×1) reconstruction, indicating irradiation-induced hydrogen desorption. Conventional molecular beam epitaxial growth is possible on a dihydride-terminated Si(001) surface following (2×1) reconstruction such that the substrate temperature never exceeds 150°C; which is not possible without irradiation.
M.J. Carey, J.R. Childress, et al.
INTERMAG 2002
W.P. Leroy, C. Detavernier, et al.
Journal of Applied Physics
Mathew J. Carey, J.R. Childress, et al.
INTERMAG 2002
J.E.E. Baglin, A.J. Kellock, et al.
Nuclear Inst. and Methods in Physics Research, B