H.S. Cho, J.R. Salem, et al.
IEEE Transactions on Magnetics
Concurrent low energy (50-70 eV) ion irradiation during silicon molecular beam epitaxy results in an increased epitaxial thickness at very low temperatures relative to conventional molecular beam epitaxy. Ion irradiation of a (1×1) dihydride-terminated Si(001) results in a (2×1) reconstruction, indicating irradiation-induced hydrogen desorption. Conventional molecular beam epitaxial growth is possible on a dihydride-terminated Si(001) surface following (2×1) reconstruction such that the substrate temperature never exceeds 150°C; which is not possible without irradiation.
H.S. Cho, J.R. Salem, et al.
IEEE Transactions on Magnetics
L. Folks, R.E. Fontana, et al.
Journal of Physics D: Applied Physics
Matthew J. Carey, S. Maat, et al.
Digests of the Intermag Conference
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995