B.E. Kastenmeier, G.S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x-ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma-induced structural disorder in the silicon surface was only observed in the RIE-etched sample.
B.E. Kastenmeier, G.S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
G.S. Oehrlein, R. Ghez, et al.
ICDS 1984
A. Henry, B. Monemar, et al.
Journal of Applied Physics
Y. Hsu, T. Standaert, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures