Schottky-barrier height of iridium silicide
- I. Ohdomari
- K.N. Tu
- et al.
- 2008
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
10 results for I. Ohdomari
Microstructure and Schottky barrier height of iridium silicides formed on silicon
- I. Ohdomari
- T.S. Kuan
- et al.
- 2008
- Journal of Applied Physics
Formation of iridium silicides from Ir thin films on Si substrates
- S. Petersson
- J.E.E. Baglin
- et al.
- 2008
- Journal of Applied Physics
Parallel silicide contacts
- I. Ohdomari
- K.N. Tu
- 2008
- Journal of Applied Physics
Low-temperature redistribution of As in Si during Ni silicide formation
- I. Ohdomari
- M. Akiyama
- et al.
- 1984
- Journal of Applied Physics
Reduction of contact resistivity by As redistribution during Pd 2Si formation
- I. Ohdomari
- M. Hori
- et al.
- 1983
- Journal of Applied Physics
Effects of hydrogenation on lightly doped polycrystalline silicon
- D.R. Campbell
- J.C.M. Hwang
- et al.
- 1982
- Journal of Applied Physics
Redistribution of As during Pd2Si formation: Ion channeling measurements
- M. Wittmer
- C.-Y. Ting
- et al.
- 1982
- Journal of Applied Physics
Low temperature doping of arsenic atoms in silicon during Pd2Si formation
- I. Ohdomari
- K. Suguro
- et al.
- 1982
- Thin Solid Films
Low-temperature redistribution of As in Si during Pd2Si formation
- I. Ohdomari
- K.N. Tu
- et al.
- 1981
- Applied Physics Letters