Publications

10 results for I. Ohdomari

Schottky-barrier height of iridium silicide
- - I. Ohdomari
  - K.N. Tu
  - et al.
- 2008
- Applied Physics Letters
Microstructure and Schottky barrier height of iridium silicides formed on silicon
- - I. Ohdomari
  - T.S. Kuan
  - et al.
- 2008
- Journal of Applied Physics
Formation of iridium silicides from Ir thin films on Si substrates
- - S. Petersson
  - J.E.E. Baglin
  - et al.
- 2008
- Journal of Applied Physics
Parallel silicide contacts
- - I. Ohdomari
  - K.N. Tu
- 2008
- Journal of Applied Physics
Low-temperature redistribution of As in Si during Ni silicide formation
- - I. Ohdomari
  - M. Akiyama
  - et al.
- 1984
- Journal of Applied Physics
Reduction of contact resistivity by As redistribution during Pd ₂Si formation
- - I. Ohdomari
  - M. Hori
  - et al.
- 1983
- Journal of Applied Physics
Redistribution of As during Pd₂Si formation: Ion channeling measurements
- - M. Wittmer
  - C.-Y. Ting
  - et al.
- 1982
- Journal of Applied Physics
Effects of hydrogenation on lightly doped polycrystalline silicon
- - D.R. Campbell
  - J.C.M. Hwang
  - et al.
- 1982
- Journal of Applied Physics
Low temperature doping of arsenic atoms in silicon during Pd₂Si formation
- - I. Ohdomari
  - K. Suguro
  - et al.
- 1982
- Thin Solid Films
Low-temperature redistribution of As in Si during Pd₂Si formation
- - I. Ohdomari
  - K.N. Tu
  - et al.
- 1981
- Applied Physics Letters