A 34&181;m2DRAM cell fabricated with a 1&181;m single-level polycide FET technology
- Hu H. Chao
- Robert H. Dermard
- et al.
- 1981
- ISSCC 1981
Publications
Date
Featured collections
Popular topics
5 results for Alice Cramer
1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
One-Micron Polycide (WSI2 on Poly-Si) MOSFET Technology
- M.Y. Tsai
- H.H. Chao
- et al.
- 2019
- JES
A 34 µ m2 DRAM Cell Fabricated with a 1 µm Single-Level Polycide FET Technology
- Hu H. Chao
- Robert H. Dennard
- et al.
- 1981
- IEEE Journal of Solid-State Circuits
1 μm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE T-ED