Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGa1-xAs superlattices and multiple-quantum-well structures
- M.A. Gell
- D. Ninno
- et al.
- 1987
- Physical Review B
Publications
Date
Featured collections
Popular topics
28 results for J.A. Bradley
Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al xGa1-xAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1994
- Applied Physics Letters
Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1994
- Physical Review B
Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures
- H.P. Hjalmarson
- G.D. Gilliland
- et al.
- 1994
- Journal of Luminescence
Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1993
- Journal of Applied Physics
Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1993
- Physical Review B
Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure
- G. Northrop
- J.F. Morar
- et al.
- 1992
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Observation of strong Si/Si1-xGex narrow quantum-well near-edge luminescence under applied hydrostatic pressure
- G. Northrop
- J.F. Morar
- et al.
- 1992
- Applied Physics Letters
Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1991
- Applied Physics Letters
Intrinsic recombination and interface characterization in "surface-free" GaAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures