PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS.
- D.J. Wolford
- H. Mariette
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
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28 results for J.A. Bradley
LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Pressure dependence of shallow bound states in gallium arsenide
- D.J. Wolford
- J.A. Bradley
- 1985
- Solid State Communications
NITROGEN ISOELECTRONIC TRAP IN GaAs.
- D.J. Wolford
- J.A. Bradley
- et al.
- 1984
- ICDS 1984
NITROGEN ISOELECTRONIC TRAP IN GaAs.
- D.J. Wolford
- J.A. Bradley
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
Efficient visible luminescence from hydrogenated amorphous silicon
- D.J. Wolford
- B.A. Scott
- et al.
- 1983
- Physica B+C
Surface-enchanced raman scattering from pyridine on Ag(111)
- P.N. Sanda
- J.M. Warlaumont
- et al.
- 1980
- Physical Review Letters
Surface-enhanced Raman spectroscopy and surface plasmons
- J.C. Tsang
- J.R. Kirtley
- et al.
- 1979
- Physical Review Letters