A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
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30 results for A.A. Bright
Technique for selective etching of Si with respect to Ge
- A.A. Bright
- Subramanian S. Iyer
- et al.
- 1988
- Applied Physics Letters
X-ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2magnetron ion etching: Comparisons to reactive ion etching
- Gottlieb S. Oehrlein
- Arthur A. Bright
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Plasma chemical aspects of magnetron ion etching with CF4/O 2
- A.A. Bright
- S. Kaushik
- et al.
- 1987
- Journal of Applied Physics
Resistivity of AuIn2+δ thin films
- A.A. Bright
- J.T. Wetzel
- 1986
- Journal of Applied Physics
Doping effects in reactive plasma etching of heavily doped silicon
- Young H. Lee
- Mao-Min Chen
- et al.
- 1985
- Applied Physics Letters
Reducing the grain size of polycrystalline lead films by the use of AuIn2 barriers to grain growth
- A.A. Bright
- Maria Ronay
- 1984
- Journal of Applied Physics
Reactive etching mechanism of tungsten silicide in CF4-O2 plasma
- Young H. Lee
- Mao-Min Chen
- et al.
- 1984
- Thin Solid Films
Fine-grained base electrode process for Pb-alloy Josephson technology
- A.A. Bright
- S. Klepner
- 1983
- JVSTA
Negative magnetoresistance of pregraphitic carbons
- A.A. Bright
- 1979
- Physical Review B