Some properties of ReSi2
- C. Krontiras
- L. Grönberg
- et al.
- 1988
- Thin Solid Films
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24 results for C.S. Petersson
Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
- F.M. d'Heurle
- C.S. Petersson
- 1985
- Thin Solid Films
Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couples
- H.-O. Blom
- S. Berg
- et al.
- 1985
- JVSTA
Rate of formation of silicon dioxide; Semiconducting ruthenium silicide
- F.M. D'Heurle
- R.D. Frampton
- et al.
- 1985
- Applied Physics Letters
Summary Abstract: Titanium silicide films prepared by reactive sputtering
- V. Deline
- F.M. d’Heurle
- 1985
- JVSTA
Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds
- F.M. D'Heurle
- C.S. Petersson
- et al.
- 1984
- Journal of Applied Physics
Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
- J.E.E. Baglin
- F.M. D'Heurle
- et al.
- 1983
- Journal of Applied Physics
Growth "kinetics" and growth mechanisms for disilicide layers obtained through implantation
- F.M. D'Heurle
- C.S. Petersson
- et al.
- 1982
- Journal of Applied Physics
Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability
- C.S. Petersson
- J.E.E. Baglin
- et al.
- 1982
- Journal of Applied Physics
The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide
- F. Jahnel
- J.P. Biersack
- et al.
- 1982
- Journal of Applied Physics