Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s
- T. Sajoto
- M. Santos
- et al.
- 1989
- Applied Physics Letters
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71 results for Mordehai Heiblum
High-gain lateral hot-electron device
- A. Palevski
- C.P. Umbach
- et al.
- 1989
- Applied Physics Letters
Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters
Inert gas reactive ion etching damage to GaAs using inverted heterojunctions
- C.M. Knoedler
- L. Osterling
- et al.
- 1989
- Journal of Applied Physics
One-dimensional electron gas in GaAs: Periodic conductance oscillations as a function of density
- U. Meirav
- M.A. Kastner
- et al.
- 1989
- Physical Review B
Hot ballistic transport and phonon emission in a two-dimensional electron gas
- U. Sivan
- M. Heiblum
- et al.
- 1989
- Physical Review Letters
Lateral tunneling, ballistic transport, and spectroscopy in a two-dimensional electron gas
- A. Palevski
- M. Heiblum
- et al.
- 1989
- Physical Review Letters
Observation of single-optical-phonon emission
- M. Heiblum
- D. Galbi
- et al.
- 1989
- Physical Review Letters
High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
Electron energy spectroscopy and the observation of ballistic transport of hot electrons in the plane of a 2DEG
- A. Palevski
- M. Heiblum
- et al.
- 1989
- IEEE T-ED