High-Quality Deposited Gate Oxide MOSFET’s and the Importance of Surface Preparation
- J.W. Stasiak
- J. Batey
- et al.
- 1989
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
8 results for J.W. Stasiak
Direct observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
A Josephson Technology System Level Experiment
- M.B. Ketchen
- B.J. van der Hoeven
- et al.
- 1981
- IEEE Electron Device Letters
Trap creation in silicon dioxide produced by hot electrons
- D.J. DiMaria
- J.W. Stasiak
- 1989
- Journal of Applied Physics
Plasma-enhanced CVD of high quality insulating films
- J. Batey
- E. Tierney
- et al.
- 1989
- Applied Surface Science
Ballistic electron transport in thin silicon dioxide films
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1987
- Physical Review B
IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2
- J. Li
- J. Batey
- et al.
- 1987
- IEEE T-ED
Superconducting electronics testing
- P.A. Moskowitz
- R.W. Guernsey
- et al.
- 1983
- Cryogenics