Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
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49 results for M.A. Tischler
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
VIB-4 Performance of Vertically Coupled Backside Fiber-Optic Interconnects to GaAs
- Robert W. Ade
- Eric R. Fossum
- et al.
- 1989
- IEEE T-ED
Deep levels in p-type GaAs grown by metalorganic vapor phase epitaxy
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Applied Physics
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1988
- Applied Physics Letters
Deep levels and minority carrier lifetime in MOVPE p-type GaAs
- P.J. Wang
- T.F. Kuech
- et al.
- 1988
- Journal of Crystal Growth
The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth
Recent progress in atomic layer epitaxy of III-V compounds
- S.M. Bedair
- B.T. McDermott
- et al.
- 1988
- Journal of Crystal Growth
The control and modeling of doping profiles and transients in MOVPE growth
- T.F. Kuech
- P.J. Wang
- et al.
- 1988
- Journal of Crystal Growth