22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
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6 results for L. Adam
Nitrogen implantation and diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 1999
- MRS Spring Meeting 1999
Full metal gate with borderless contact for 14 nm and beyond
- Soon-Cheon Seo
- L.F. Edge
- et al.
- 2011
- VLSI Technology 2011
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Comprehensive model for nitrogen diffusion in silicon
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
A physical model for implanted nitrogen diffusion and its effect on oxide growth
- Lahir Shaik Adam
- Mark E. Law
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting