Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
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83 results for Donald Canaperi
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
A comparative study of ceria-based and silica-based slurries for 32 nm shallow trench isolation chemical mechanical planarization
- Jason E. Cummings
- Matthew D. Smalley
- et al.
- 2008
- CMP-MIC 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Advanced chemical-mechanical planarization (CMP) for enabling silicon carrier integration with through-vias and fine pitch wiring
- Cornelia K. Tsang
- Donald F. Canaperi
- et al.
- 2006
- CMP-MIC 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Electromigration Cu mass flow in Cu interconnections
- C.-K. Hu
- D. Canaperi
- et al.
- 2006
- Thin Solid Films
Silicon carrier with deep through-vias, fine pitch wiring, and through cavity for parallel optical transceiver
- Chirag S. Patel
- Cornelia K. Tsang
- et al.
- 2005
- ADMETA 2005
Enabling SOI-based assembly technology for three-dimensional (3D) integrated circuits (ICs)
- A. Topol
- D.C. La Tulipe
- et al.
- 2005
- IEDM 2005