Hot electrons in silicon dioxide: Ballistic to steady-state transport
- D.J. DiMaria
- M.V. Fischetti
- 1987
- Applied Surface Science
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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102 results for Massimo V. Fischetti
Electron heating studies in silicon dioxide: Low fields and thick films
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
SiO2-induced substrate current and its relation to positive charge in field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- et al.
- 1986
- Journal of Applied Physics
Investigation of the SiO2-induced substrate current in silicon field-effect transistors
- Z.A. Weinberg
- M.V. Fischetti
- 1985
- Journal of Applied Physics
Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
- Massimo V. Fischetti
- 1985
- Journal of Applied Physics
Hot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 K
- M.V. Fischetti
- B. Riccó
- 1985
- Journal of Applied Physics
The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface
- M.V. Fischetti
- Z.A. Weinberg
- et al.
- 1985
- Journal of Applied Physics
Direct measurement of the energy distribution of hot electrons in silicon dioxide
- S.D. Brorson
- D.J. DiMaria
- et al.
- 1985
- Journal of Applied Physics
Theory of high-field electron transport in silicon dioxide
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1985
- Physical Review B
Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode
- Massimo V. Fischetti
- 1985
- Physical Review B