On the long-range order in AlGaAs
- W.I. Wang
- 1985
- Journal of Applied Physics
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71 results for W.I. Wang
Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
- W.I. Wang
- E. Mendez
- et al.
- 1985
- Applied Physics Letters
Temperature dependence of hole mobility in GaAs-Ga1-xAl xAs heterojunctions
- E. Mendez
- W.I. Wang
- 1985
- Applied Physics Letters
FRACTIONAL HALL QUANTIZATION OF TWO-DIMENSIONAL HOLES IN GaAs-GaAlAs HETEROSTRUCTURES.
- L.L. Chang
- E. Mendez
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions
- W.I. Wang
- E. Mendez
- et al.
- 1984
- Applied Physics Letters
Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
- W.I. Wang
- 1984
- Applied Physics Letters
Fractional quantum Hall effect in a two-dimensional hole system
- E. Mendez
- W.I. Wang
- et al.
- 1984
- Physical Review B
IIIA-4 P-channel Ga0.5 Al0.5 As/GaAs MODFET's
- W.I. Wang
- S. Tiwari
- 1984
- IEEE T-ED
p-Channel MODFET's Using GaAlAs/GaAs Two-Dimensional Hole Gas
- S. Tiwari
- W.I. Wang
- 1984
- IEEE Electron Device Letters
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics