Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
- W.I. Wang
- T.S. Kuan
- et al.
- 1985
- Physical Review B
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71 results for W.I. Wang
Temperature dependence of hole mobility in GaAs-Ga1-xAl xAs heterojunctions
- E. Mendez
- W.I. Wang
- 1985
- Applied Physics Letters
On the long-range order in AlGaAs
- W.I. Wang
- 1985
- Journal of Applied Physics
Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures
- E. Mendez
- W.I. Wang
- et al.
- 1985
- Applied Physics Letters
Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
- W.I. Wang
- E. Mendez
- et al.
- 1985
- Applied Physics Letters
Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
- W.I. Wang
- 1984
- Applied Physics Letters
High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions
- W.I. Wang
- E. Mendez
- et al.
- 1984
- Applied Physics Letters
Fractional quantum Hall effect in a two-dimensional hole system
- E. Mendez
- W.I. Wang
- et al.
- 1984
- Physical Review B
IIIA-4 P-channel Ga0.5 Al0.5 As/GaAs MODFET's
- W.I. Wang
- S. Tiwari
- 1984
- IEEE T-ED
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics