The effect of surface preparation on the production of low interfacial charge regrown interfaces
- T.F. Kuech
- E.D. Marshall
- et al.
- 1986
- Journal of Crystal Growth
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88 results for T.F. Kuech
Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition
- T.F. Kuech
- R.M. Potemski
- et al.
- 1985
- Journal of Applied Physics
Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
- T.F. Kuech
- R.M. Potemski
- 1985
- Applied Physics Letters
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Thermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters
Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Journal of Crystal Growth
Mechanism of carbon incorporation in MOCVD GaAs
- T.F. Kuech
- E. Veuhoff
- 1984
- Journal of Crystal Growth