LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Publications
Date
Featured collections
Popular topics
88 results for T.F. Kuech
Long-range order in AlxGa1-xAs
- T.S. Kuan
- T.F. Kuech
- et al.
- 1985
- Physical Review Letters
Thermal and chemical stability of Schottky metallization on GaAs
- S.S. Lau
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
- T.F. Kuech
- R.M. Potemski
- 1985
- Applied Physics Letters
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy
- E.D. Marshall
- W.X. Chen
- et al.
- 1985
- Applied Physics Letters
Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters
Mechanism of carbon incorporation in MOCVD GaAs
- T.F. Kuech
- E. Veuhoff
- 1984
- Journal of Crystal Growth
Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Journal of Crystal Growth