Characteristics of vertical p-channel MOSFETs for high density circuit application
- D.S. Wen
- W.H. Chang
- et al.
- 1991
- VLSI-TSA 1991
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42 results for W. Hwang
Low temperature 12 ns DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- VLSI-TSA 1989
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- S. Dhong
- W.H. Henkels
- et al.
- 1989
- VLSI Circuits 1989
Low temperature SER and noise in a high speed DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989
Experimental low temperature DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- VLSI Circuits 1989
A 12-ns Low-Temperature DRAM
- Walter H. Henkels
- Nicky C. C. Lu
- et al.
- 1989
- IEEE T-ED
A 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- Nicky C.C. Lu
- Gary B. Bronner
- et al.
- 1989
- IEEE Journal of Solid-State Circuits
A New Failure Mode of Radiation-Induced Soft Errors in Dynamic Memories
- T.V. Rajeevakumar
- Nicky C. C. Lu
- et al.
- 1988
- IEEE Electron Device Letters
Highspeed Sensing Scheme for CMOS DRAM's
- Sang H. Dhong
- Nicky Chau-Chun Lu
- et al.
- 1988
- IEEE Journal of Solid-State Circuits
A 20-ns 128-Kbit X 4 High-Speed DRAM with 330-Mbit/s Data Rate
- Nicky C.C. Lu
- Hu H. Chao
- et al.
- 1988
- IEEE Journal of Solid-State Circuits