Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
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64 results for J.M.C. Stork
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Characterization of Non-Ohmic Behavior of Emitter Contacts of Bipolar Transistors
- B. Ricco
- J.M.C. Stork
- et al.
- 1984
- IEEE Electron Device Letters
Technology leverage for ultra-low power information systems
- J.M.C. Stork
- 1994
- LPE 1994
GaAs performance in Si technology: SiGe HBTs for mixed analog-digital applications
- J.M.C. Stork
- D.L. Harame
- et al.
- 1994
- GaAs IC 1994
113-GHz f T graded-base SiGe HBTs
- E.F. Crabbé
- B. Mcyerson
- et al.
- 1993
- Device Research Conference 1993
A SiGe-base PNP ECL circuit technology
- D.L. Harame
- J.H. Comfort
- et al.
- 1993
- VLSI Technology 1993
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991