High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters
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64 results for J.M.C. Stork
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
SiGe alloys: growth, properties and applications
- Maurizio Arienzo
- Subramanian S. Iyer
- et al.
- 1991
- Applied Surface Science
Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- D.L. Harame
- J.M.C. Stork
- et al.
- 1990
- VLSI Technology 1990
The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
63-75 GHz fT SiGe-base heterojunction bipolar technology
- G.L. Patton
- J.H. Comfort
- et al.
- 1990
- VLSI Technology 1990
Low temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990